Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects |
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| Zhang Dawei,Tian Lilin,and Yu Zhiping.Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects[J].Chinese Journal of Semiconductors,2005,26(3):429-435. |
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| Authors: | Zhang Dawei Tian Lilin Yu Zhiping |
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| Keywords: | DG MOSFET 1D analytical QM solution non uniform potential in channel depth direction electron density threshold voltage channel depth |
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| Affiliation in Chinese: | 清华大学微电子学研究所 北京100084
(张大伟，田立林)，清华大学微电子学研究所 北京100084(余志平) |
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| Abstract in Chinese: | The analytical solutions to 1D Schrodinger equation (in depth direction) in douBle-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.The non-uniform potential in the channel is concerned with an arbitrary depth so that the analytical solutions agree well with numerical ones.Then,an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects.This model predicts an increased electron density with an increasing channel depth in subthreshold region or mild inversion region.However,it becomes independent on channel depth in strong inversion region,which is in accordance with numerical analysis.It is also concluded that the QM model,which barely considers a box-like potential in the channel,slightly overpredicts threshold voltage and underestimates electron density，and the error increases with an increasing channel depth or a decreasing gateoxide thickness. |
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